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PD - 95221
IRLL024NPBF
HEXFET(R) Power MOSFET
Surface Mount Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l Fast Switching l Fully Avalanche Rated l Lead-Free Description
l l
D
VDSS = 55V RDS(on) = 0.065
G S
ID = 3.1A
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The SOT-223 package is designed for surface-mount using vapor phase, infra red, or wave soldering techniques. Its unique package design allows for easy automatic pickand-place as with other SOT or SOIC packages but has the added advantage of improved thermal performance due to an enlarged tab for heatsinking. Power dissipation of 1.0W is possible in a typical surface mount application.
S O T -2 2 3
Absolute Maximum Ratings
Parameter
ID @ TA = 25C ID @ TA = 25C ID @ TA = 70C IDM PD @TA = 25C PD @TA = 25C VGS EAS IAR EAR dv/dt TJ, TSTG Continuous Drain Current, VGS @ 10V** Continuous Drain Current, VGS @ 10V* Continuous Drain Current, VGS @ 10V* Pulsed Drain Current Power Dissipation (PCB Mount)** Power Dissipation (PCB Mount)* Linear Derating Factor (PCB Mount)* Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy* Peak Diode Recovery dv/dt Junction and Storage Temperature Range
Max.
4.4 3.1 2.5 12 2.1 1.0 8.3 16 120 3.1 0.1 5.0 -55 to + 150
Units
A
W W
mW/C
V mJ A mJ V/ns C
Thermal Resistance
Parameter
RJA RJA Junction-to-Amb. (PCB Mount, steady state)* Junction-to-Amb. (PCB Mount, steady state)**
Typ.
90 50
Max.
120 60
Units
C/W
* When mounted on FR-4 board using minimum recommended footprint. ** When mounted on 1 inch square copper board, for comparison with other SMD devices.
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04/27/04
IRLL024NPBF
Electrical Characteristics @ TJ = 25C (unless otherwise specified)
V(BR)DSS
V(BR)DSS/TJ
Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance
RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss
Min. 55 --- --- --- --- 1.0 3.3 --- --- --- --- --- --- --- --- --- --- --- --- --- ---
Typ. --- 0.048 --- --- --- --- --- --- --- --- --- 10.4 1.5 5.5 7.4 21 18 25 510 140 58
Max. Units Conditions --- V VGS = 0V, ID = 250A --- V/C Reference to 25C, ID = 1mA 0.065 VGS = 10V, ID = 3.1A 0.080 VGS = 5.0V, ID = 2.5A 0.100 VGS = 4.0V, ID = 1.6A 2.0 V VDS = VGS, ID = 250A --- S VDS = 25V, ID = 1.9 A 25 VDS = 55V, VGS = 0V A 250 VDS = 44V, VGS = 0V, TJ = 125C 100 VGS = 16V nA -100 VGS = -16V 15.6 ID = 1.9A 2.3 nC VDS = 44V 8.3 VGS = 5.0V, See Fig. 6 and 9 --- VDD = 28V --- ID = 1.9A ns --- RG = 24 --- RD = 15 , See Fig. 10 --- VGS = 0V --- pF VDS = 25V --- = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
IS
ISM
VSD trr Qrr ton
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Forward Turn-On Time
Min. Typ. Max. Units
Conditions MOSFET symbol --- --- 3.1 showing the A integral reverse --- --- 12 p-n junction diode. --- --- 1.0 V TJ = 25C, IS = 1.9A, VGS = 0V --- 39 58 ns TJ = 25C, IF = 1.9A --- 63 94 nC di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
ISD 1.9A, di/dt 270A/s, VDD V(BR)DSS,
TJ 150C
Starting TJ = 25C, L = 25 mH
RG = 25, IAS = 3.1A. (See Figure 12)
Pulse width 300s; duty cycle 2%.
2
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IRLL024NPBF
100
I D , Drain-to-Source Current (A)
I D , Drain-to-Source Current (A)
VGS 15V 10V 7.0V 5.5V 4.5V 4.0V 3.5V BOTTOM 2.7V TOP
100
VGS 15V 10V 7.0V 5.5V 4.5V 4.0V 3.5V BOTTOM 2.7V TOP
10
10
2.7V
20s PULSE WIDTH T = 150 C
J 1 10 100
2.7V
20s PULSE WIDTH T = 25 C
J 1 10 100
1 0.1
1 0.1
VDS , Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100
2.0
ID = 3.1A
I D , Drain-to-Source Current (A)
TJ = 25 C TJ = 150 C
RDS(on) , Drain-to-Source On Resistance (Normalized)
1.5
10
1.0
0.5
1 2 4 6
V DS = 25V 20s PULSE WIDTH 8 10 12
0.0 -60 -40 -20
VGS = 10V
0 20 40 60 80 100 120 140 160
VGS , Gate-to-Source Voltage (V)
TJ , Junction Temperature ( C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
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IRLL024NPBF
1000
VGS , Gate-to-Source Voltage (V)
800
VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd
15
ID = 1.9A
12
C, Capacitance (pF)
600
Ciss
VDS = 44V VDS = 27V VDS = 11V
9
400
6
200
C oss C rss
3
0 1 10 100
0 0 4 8
FOR TEST CIRCUIT SEE FIGURE 13
12 16 20
VDS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
100
100
ISD , Reverse Drain Current (A)
OPERATION IN THIS AREA LIMITED BY R
DS(on)
10
I D , Drain Current (A)
10
TJ = 150 C
100us 1ms
1
1
10ms
TJ = 25 C V GS = 0 V
0.6 0.8 1.0 1.2 1.4
0.1 0.4
0.1 0.1
TC = 25 C TJ = 150 C Single Pulse
1 10 100 1000
VSD ,Source-to-Drain Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
4
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IRLL024NPBF
4.0
VDS VGS
RD
D.U.T.
+
I D , Drain Current (A)
3.0
RG
- VDD
5.0V
2.0
Pulse Width 1 s Duty Factor 0.1 %
1.0
Fig 10a. Switching Time Test Circuit
VDS 90%
0.0 25 50 75 100 125 150
TC , Case Temperature
( C)
10% VGS
td(on) tr t d(off) tf
Fig 9. Maximum Drain Current Vs. Case Temperature
Fig 10b. Switching Time Waveforms
1000
Thermal Response (Z thJA )
100 D = 0.50 0.20 10 0.10 0.05 0.02 0.01 1
0.1 0.00001
SINGLE PULSE (THERMAL RESPONSE) 0.0001 0.001 0.01 0.1
Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJA + TA 1 10
P DM t1 t2 100
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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IRLL024NPBF
300
EAS , Single Pulse Avalanche Energy (mJ)
1 5V
250
TOP BOTTOM ID 1.4A 2.5A 3.1A
200
VD S
L
D R IV E R
150
RG
10V tp
D .U .T
IA S
+ V - DD
A
100
0.0 1
50
Fig 12a. Unclamped Inductive Test Circuit
0 25 50 75 100 125 150
Starting TJ , Junction Temperature ( C)
V (B R )D SS tp
Fig 12c. Maximum Avalanche Energy Vs. Drain Current
IAS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator Same Type as D.U.T.
50K
QG
12V
.2F .3F
5.0 V
QGS VG QGD
VGS
3mA
D.U.T.
+ V - DS
Charge
IG
ID
Current Sampling Resistors
Fig 13a. Basic Gate Charge Waveform
Fig 13b. Gate Charge Test Circuit
6
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IRLL024NPBF
SOT-223 (TO-261AA) Package Outline
Dimensions are shown in milimeters (inches)
SOT-223 (TO-261AA) Part Marking Information
HE XF E T PRODUCT MARKING
T HIS IS AN IRF L 014
INT E RNAT IONAL RE CT IF IE R L OGO
PAR T NUMB E R
L OT CODE AXXXX
F L014 314P
A = AS S E MB LY S IT E DAT E CODE CODE (YYWW) YY = YE AR WW = WE E K P = DE S IGNAT E S LE AD-F RE E PRODUCT (OPT IONAL)
T OP
B OT T OM
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IRLL024NPBF
SOT-223 (TO-261AA) Tape & Reel Information
Dimensions are shown in milimeters (inches)
4 .1 0 (.1 6 1 ) 3 .9 0 (.1 5 4 ) 0 .3 5 (.0 1 3 ) 0 .2 5 (.0 1 0 ) 1 .8 5 (.0 7 2 ) 1 .6 5 (.0 6 5 )
TR
2 .0 5 (.0 8 0 ) 1 .9 5 (.0 7 7 )
7 .5 5 (.2 9 7) 7 .4 5 (.2 9 4) 7 .6 0 (.2 9 9 ) 7 .4 0 (.2 9 2 ) 1 .6 0 (.0 6 2 ) 1 .5 0 (.0 5 9 ) TYP . F E E D D IR E C T IO N 1 2 .1 0 (.4 7 5 ) 1 1 .9 0 (.4 6 9 ) NOTES : 1 . C O N T R O L L IN G D IM E N S IO N : M IL L IM E T E R . 2 . O U T L IN E C O N F O R M S T O E IA -4 8 1 & E IA -5 4 1 . 3 . E A C H O 3 30 .0 0 (1 3 .0 0 ) R E E L C O N T A IN S 2 ,5 0 0 D E V IC E S . 1 3 .2 0 (.5 1 9 ) 1 2 .8 0 (.5 0 4 ) 1 5 .40 (.6 0 7) 1 1 .90 (.4 6 9) 4 7 .1 0 (.2 7 9 ) 6 .9 0 (.2 7 2 )
1 6 .3 0 (.6 4 1 ) 1 5 .7 0 (.6 1 9 )
2 .3 0 (.0 9 0 ) 2 .1 0 (.0 8 3 )
330.00 (13.000) M AX.
5 0.00 (1 .9 6 9 ) M IN .
NO TE S : 1 . O U T LIN E C O M F O R M S T O E IA -4 1 8 -1 . 2 . C O N T R O L L IN G D IM E N S IO N : M IL L IM E T E R .. 3 . D IM E N S IO N M E A S U R E D @ H U B . 4 . IN C L U D E S F L A N G E D IS T O R T IO N @ O U T E R E D G E .
1 4 .4 0 (.5 6 6 ) 1 2 .4 0 (.4 8 8 ) 3
1 8 .4 0 (.72 4 ) M AX . 4
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 04/04
8
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